IPW50R280CEFKSA1

Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPW50R280CEFKSA1, 13 A, Vds=550 V, 3引脚 TO-247封装

CoolMOS™ CE 功率 MOSFET

得捷:
MOSFET N-CH 500V 13A TO247-3

欧时:
Infineon CoolMOS CE 系列 Si N沟道 MOSFET IPW50R280CEFKSA1, 13 A, Vds=550 V, 3引脚 TO-247封装

e络盟:
功率场效应管, MOSFET, N沟道, 500 V, 18.1 A, 0.25 ohm, TO-247, 通孔

艾睿:
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPW50R280CEFKSA1 power MOSFET. Its maximum power dissipation is 92000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

TME:
Transistor: N-MOSFET; unipolar; 500V; 13A; 92W; PG-TO247-3

Verical:
Trans MOSFET N-CH 550V 13A 3-Pin3+Tab TO-247 Tube