HMC606LC5

ANALOG DEVICES  HMC606LC5  芯片, 宽带低噪放大器, SMT, 2-18GHZ

Product Details

The is a gallium arsenide GaAs, indium gallium phosphide InGaP, heterojunction bipolar transistor HBT, monolithic microwave integrated circuit MMIC distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier LCC package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor FET-based distributed amplifiers.

The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm output IP3, and 15 dBm of output power for 1 dB compression while requiring 64 mA from a 5.0 V supply. The input and output of the HMC606LC5 amplifier are internally matched to 50 Ω and are internally dc blocked.

**Applications**

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Radars, electronic warfare EW, and electronic counter measures ECMs

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Microwave radios

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Test instrumentation

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Military and space

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Fiber optic systems

### Features and Benefits

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Ultralow phase noise: −160 dBc/Hz typical at 10 kHz

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Output power for 1 dB compression P1dB: 15 dBm typical at 2 GHz to 12 GHz frequency range

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Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range

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Output third-order intercept IP3: 27 dBm typical at 2 GHz to 12 GHz frequency range

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Supply voltage: 5.0 V at 64 mA typical

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50 Ω matched input/output

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32-terminal, ceramic, leadless chip carrier LCC