250V N沟道MOSFET 250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features
• 21A, 250V, RDSon = 0.14Ω @VGS = 10 V
• Low gate charge typical 95 nC
• Low Crss typical 60 pF
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
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