功率半导体功率模块 Power Semiconductors Power Modules
Don"t be afraid to step up the amps in your device when using this IGBT transistor from . Its maximum power dissipation is 446000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
型号 | 品牌 | 下载 |
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APT100GN120J | Microsemi 美高森美 | 下载 |
APT100GT120JU2 | Microsemi 美高森美 | 下载 |
APT15GN120KG | Microsemi 美高森美 | 下载 |
APT11GF120BRDQ1G | Microsemi 美高森美 | 下载 |
APT15GT60KRG | Microsemi 美高森美 | 下载 |
APT15D100KG | Microsemi 美高森美 | 下载 |
APT15D60KG | Microsemi 美高森美 | 下载 |
APT15DQ100KG | Microsemi 美高森美 | 下载 |
APT15D60K | Microsemi 美高森美 | 下载 |
APT15DQ120KG | Microsemi 美高森美 | 下载 |
APT15DQ60BG | Microsemi 美高森美 | 下载 |