RF Power Transistor,728 to 2700MHz, 10W, Typ Gain in dB is 19.8 @ 2400MHz, 28V, LDMOS, SOT1811
Overview
The RF power LDMOS transistor is suitable for industrial heating applications from 728 to 2700 MHz. Device is capable of both CW and pulse operation.
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## Features
* Greater Negative Gate-Source Voltage Range for Improved Class C Operation
* Designed for Digital Predistortion Error Correction Systems
* Universal Broadband Driven Device with Internal RF Feedback
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.
## Features RF Performance Table
### 2300 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---|---
2300 MHz| 21.2| 23.6| 9.0| –40.9| –10
2350 MHz| 21.6| 22.6| 8.6| –40.0| –22
2400 MHz| 20.7| 21.0| 8.3| –40.1| –9
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