IXDD609SITR

IXDD609SITR概述

低边 IGBT MOSFET 灌:9A 拉:9A

Use this power driver from Ixys Corporation to power your transistors. This device has a maximum propagation delay time of 60 ns. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 35 V.

IXDD609SITR数据文档
型号 品牌 下载
IXDD609SITR

IXYS Semiconductor

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IXDD509D1T/R

IXYS Semiconductor

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IXDD504SIAT/R

IXYS Semiconductor

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IXDD504D2T/R

IXYS Semiconductor

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IXDD609D2TR

IXYS Semiconductor

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IXDD609PI

IXYS Semiconductor

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IXDD630YI

IXYS Semiconductor

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IXDD609SIA

IXYS Semiconductor

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IXDD604SIA

IXYS Semiconductor

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IXDD609CI

IXYS Semiconductor

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IXDD604PI

IXYS Semiconductor

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