FQU13N06LTU

FAIRCHILD SEMICONDUCTOR  FQU13N06LTU  晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V

The is a QFET® enhancement-mode N-channel Power MOSFET is produced using Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.

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Low level gate drive requirements allowing direct operation form logic drivers

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100% Avalanche tested

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4.8nC Typical low gate charge

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17pF Typical low Crss