1N5809 100 V 3 A 轴向 无空隙 密封 超快恢复 整流器
FEATURES:
· Chip Outline Dimensions: 68 x 68 mils
· Chip Thickness: 8 to 12 mils
· Anode Metallization: Aluminum
· Metallization Thickness: 70,000ÃNominal
· Bonding Area: 42 x 42 mils Min.
· Back Metallization: Gold-3000ÃNominal
· Junction Passivated with Thermal Silicon Dioxide - Planar Design
· Backside Available with Solderable Ag Backside as JANHCF or JANKCF
艾睿:
If your circuit needs to adjust from an AC to DC voltage use a switching diode 1N5809 rectifier from Microsemi. This rectifier has an operating temperature range of -65 °C to 175 °C. It is made in a single configuration. Its peak non-repetitive surge current is 125 A, while its maximum continuous forward current is 6 A.
Chip1Stop:
Diode Switching 100V 6A 2-Pin Case E
TME:
Diode: rectifying; THT; 100V; 6A; Package: tape; 30ns; Ifsm:125A
Verical:
Rectifier Diode Switching 100V 6A 30ns 2-Pin Case E Bag
Win Source:
DIODE GEN PURP 100V 3A AXIAL
型号 | 品牌 | 下载 |
---|---|---|
1N5809 | Microsemi 美高森美 | 下载 |
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1N5822-E3/54 | Vishay Semiconductor 威世 | 下载 |
1N5821G | ON Semiconductor 安森美 | 下载 |
1N5818G | ON Semiconductor 安森美 | 下载 |
1N5817 | Fairchild 飞兆/仙童 | 下载 |
1N5819 | Fairchild 飞兆/仙童 | 下载 |
1N5818RLG | ON Semiconductor 安森美 | 下载 |