MJ21196

MJ21196概述

硅功率晶体管 Silicon Power Transistors

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ21195 − PNP

− NPN

The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

•Total Harmonic Distortion Characterized

•High DC Current Gain − hFE= 25 Min @ IC= 8 Adc

•Excellent Gain Linearity

•High SOA: 3 A, 80 V, 1 Sec

•Pb−Free Packages are Available
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MJ21196数据文档
型号 品牌 下载
MJ21196

ON Semiconductor 安森美

下载
MJ21196G

ON Semiconductor 安森美

下载
MJ21195G

ON Semiconductor 安森美

下载
MJ21193G

ON Semiconductor 安森美

下载
MJ21194G

ON Semiconductor 安森美

下载
MJ21195

ON Semiconductor 安森美

下载
MJ21294G

ON Semiconductor 安森美

下载
MJ21193

ON Semiconductor 安森美

下载
MJ21194

ON Semiconductor 安森美

下载
MJ2100FE-R52

Ohmite

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MJ2102FE-R52

Ohmite

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