SPD50P03LGBTMA1

INFINEON  SPD50P03LGBTMA1  晶体管 双极预偏置/数字, BRT, TO-252

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 50A TO252-5

立创商城:
P沟道 30V 50A

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET SPD50P03LGBTMA1, 50 A, Vds=30 V, 5引脚 DPAK TO-252封装

e络盟:
晶体管, MOSFET, BRT, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -1.5 V

艾睿:
If you need to either amplify or switch between signals in your design, then Infineon Technologies&s; SPD50P03LGBTMA1 power MOSFET is for you. Its maximum power dissipation is 150000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Chip1Stop:
Trans MOSFET P-CH 30V 50A Automotive 5-Pin4+Tab TO-252 T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -50A; 150W; PG-TO252-5

Verical:
Trans MOSFET P-CH 30V 50A Automotive 5-Pin4+Tab TO-252 T/R

Newark:
# INFINEON  SPD50P03LGBTMA1  Bipolar Pre-Biased / Digital Transistor, BRT, TO-252

Win Source:
MOSFET P-CH 30V 50A TO252-5 / P-Channel 30 V 50A Tc 150W Tc Surface Mount PG-TO252-5