IPD180N10N3GBTMA1数据手册PDF_IPD180N10N3GBTMA1中文资料-锐单商城

IPD180N10N3GBTMA1概述

INFINEON IPD180N10N3GBTMA1 晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0147 ohm, 10 V, 2.7 V 新

IPD180N10N3 G, SP000482438

得捷:
MOSFET N-CH 100V 43A TO252-3

贸泽:
MOSFET N-Ch 100V 43A DPAK-2 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 43 A, 0.0147 ohm, TO-252 DPAK, 表面安装

艾睿:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab DPAK T/R

富昌:
IPD180N10N3 系列 100 V 18 mOhm N沟道 OptiMOSTM3 功率-晶体管 -PG-TO-252-3

Chip1Stop:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab TO-252

TME:
Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO252-3

Verical:
Trans MOSFET N-CH 100V 43A 3-Pin2+Tab DPAK T/R

Newark:
# INFINEON IPD180N10N3GBTMA1 MOSFET, N-CH, 100V, 43A, TO-252-3 New

IPD180N10N3GBTMA1数据文档