UMH10

UMH10 NPN+NPN复合带阻尼三极管 50V 100mA R1=2.2KΩ R2=47KΩ 150mW/0.15W SOT-363/UMT6/SC-88/SC70-6 标记H10 开关电路 逆变器 接口电路 驱动电路

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V 集电极连续输出电流IC Collector CurrentIC | 100mA Q1基极输入电阻R1 Input ResistanceR1 | 2.2KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q1电阻比R1/R2 Q1 Resistance Ratio | 0.0468 Q2基极输入电阻R1 Input ResistanceR1 | 2.2KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 47KΩ/Ohm Q2电阻比R1/R2 Q2 Resistance Ratio | 0.0468 直流电流增益hFE DC Current GainhFE | 截止频率fT Transtion FrequencyfT | 250MHz 耗散功率Pc Power Dissipation | 150mW/0.15W Description & Applications | Features • General purpose dual digital transistors • Two DTC123J chips in a EMT or UMT or SMT package. • Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half. 描述与应用 | 特点 •通用（双数字晶体管） •两个DTC123J芯片在EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半。