SIHG24N65E-GE3

SIHG24N65E-GE3概述

VISHAY  SIHG24N65E-GE3  场效应管, MOSFET, N沟道, 650V, 24A, TO-247AC-3

The is a 700V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications.

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Low figure-of-meritFOM RON x Qg
.
Low input capacitance CISS
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Reduced switching and conduction losses
.
Ultra low gate charge
.
Avalanche energy rated
.
Halogen-free
SIHG24N65E-GE3数据文档
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