Trans GP BJT NPN 80V 1A 3Pin CSOT-23
s brings you the solution to your high-voltage BJT needs with their NPN general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| JANS1N5283UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5287UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5288UR-1 | Microsemi 美高森美 | 下载 |
| JANS1N5289UR-1 | Microsemi 美高森美 | 下载 |
| JANS2N3700UB | Microsemi 美高森美 | 下载 |
| JANS2N2222A | Semicoa Semiconductor | 下载 |
| JANS1N5619 | Microsemi 美高森美 | 下载 |
| JANS1N5618 | Microsemi 美高森美 | 下载 |
| JANS2N2219A | Semicoa Semiconductor | 下载 |