STGW25S120DF3

STMICROELECTRONICS  STGW25S120DF3  晶体管, IGBT, TO247

IGBT 分立，STMicroelectronics

得捷:
IGBT 1200V 25A TO247

欧时:
### IGBT 分立，STMicroelectronics### IGBT 分立件和模块，STMicroelectronics绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

e络盟:
单晶体管, IGBT, 50 A, 1.6 V, 375 W, 1.2 kV, TO-247, 3 引脚

艾睿:
The STGW25S120DF3 IGBT transistor from STMicroelectronics is the best electronic switch for fast switching. Its maximum power dissipation is 375000 mW. It has a maximum collector emitter voltage of 1200 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.

安富利:
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247 Tube

Verical:
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin3+Tab TO-247 Tube