STGB20V60F

IGBT 分立，STMicroelectronics IGBT 分立件和模块，STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，STMicroelectronics

得捷:
IGBT 600V 40A 167W D2PAK

欧时:
STMicroelectronics STGB20V60F N沟道 IGBT, Vce=600 V, 40 A, 3引脚 D2PAK TO-263封装

艾睿:
Don&s;t be afraid to step up the amps in your device when using this STGB20V60F IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 167000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.

安富利:
Trans IGBT Chip N-CH 600V 40A 3-Pin D2PAK T/R

Chip1Stop:
Trans IGBT Chip N-CH 600V 40A 3-Pin2+Tab D2PAK T/R