PHT6N06LT

NXP  PHT6N06LT  晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V

The is a 55V logic level N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS technology. Low conduction losses due to low on-state resistance and electrostatically robust due to integrated protection diodes. Suitable for use in DC to DC converters and general purpose switching applications.

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150°C Junction temperature