UNR32A100L

NPN硅外延平面晶体管用于数字电路特性•最佳的s缩小设备和高密度安装•低功耗贡献

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO| 50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO| 50V 集电极连续输出电流IC Collector CurrentIC| 80mA 基极输入电阻R1 Input ResistanceR1| 10KΩ/Ohm 基极-发射极输入电阻R2 Base-Emitter ResistanceR2| 10KΩ/Ohm 电阻比R1/R2 Resistance Ratio| 1 直流电流增益hFE DC Current GainhFE| 35 截止频率fT Transtion FrequencyfT| 150MHz 耗散功率Pc Power Dissipation| 0.1W/100mW Description & Applications| Silicon NPN epitaxial planar transistor For digital circuits Features • Optimum for downsizing of the equipment and high-density mounting •Contribute for low power consumption 描述与应用| NPN硅外延平面 用于数字电路 特性 •最佳的s缩小设备和高密度安装 •低功耗贡献