SVF2N60M

MOS场效应管 SVF2N60M TO-251 N沟道,600V,2A,3.7Ω@10V

GENERAL DESCRIPTION

/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using proprietary F-cell™ structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

FEATURES

∗2A,600V,RDSontyp.=3.7Ω@VGS=10V

∗ Low gate charge

∗Low Crss

∗Fast switching

∗ Improved dv/dt capability