IXTN200N10L2

IXTN200N10L2概述

底座安装 N 通道 100V 178A(Tc) 830W(Tc) SOT-227B

底座安装 N 通道 178A(Tc) 830W(Tc) SOT-227B


欧时:
Linear MOSFET 200A 100V SOT227


得捷:
MOSFET N-CH 100V 178A SOT227B


立创商城:
N沟道 100V 178A


贸泽:
MOSFET Linear L2 Pwr MOSFET w/Extended FBSOA


艾睿:
This IXTN200N10L2 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 830000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


Verical:
Trans MOSFET N-CH 100V 178A 4-Pin SOT-227


Win Source:
MOSFET N-CH 100V 178A SOT227B / N-Channel 100 V 178A Tc 830W Tc Chassis Mount SOT-227B


IXTN200N10L2数据文档
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