Trans GP BJT NPN 500V 3.5A 3Pin2+Tab TO-3
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| 2N5191G | ON Semiconductor 安森美 | 下载 |
| 2N5192G | ON Semiconductor 安森美 | 下载 |
| 2N5195G | ON Semiconductor 安森美 | 下载 |
| 2N5115 | Microsemi 美高森美 | 下载 |
| 2N5115UB | Microsemi 美高森美 | 下载 |
| 2N5116 | Microsemi 美高森美 | 下载 |
| 2N5114 | Microsemi 美高森美 | 下载 |
| 2N5114UB | Microsemi 美高森美 | 下载 |
| 2N5114-E3 | Vishay Semiconductor 威世 | 下载 |
| 2N5116-E3 | Vishay Semiconductor 威世 | 下载 |