IPB80P04P405ATMA1

Infineon OptiMOS P 系列 Si P沟道 MOSFET IPB80P04P405ATMA1, 80 A, Vds=40 V, 3引脚 D2PAK TO-263封装

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 40V 80A TO263-3

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET IPB80P04P405ATMA1, 80 A, Vds=40 V, 3引脚 D2PAK TO-263封装

e络盟:
晶体管, MOSFET, P沟道, -80 A, -40 V, 0.0037 ohm, -10 V, -3 V

艾睿:
Use Infineon Technologies&s; IPB80P04P405ATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 125000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.

Verical:
Trans MOSFET P-CH 40V 80A Automotive 3-Pin2+Tab D2PAK T/R