P沟道 200V 32A
表面贴装型 P 通道 32A（Tc） 300W（Tc） TO-263（IXTA）
得捷:
MOSFET P-CH 200V 32A TO263
立创商城:
P沟道 200V 32A
艾睿:
In addition to amplifying electronic signals, you&s;ll be able to switch between various lines with the IXTA32P20T power MOSFET, developed by Ixys Corporation. Its maximum power dissipation is 300000 mW. This device is made with trenchp technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXTA32P20T | IXYS Semiconductor | 下载 |
| IXTA88N085T7 | IXYS Semiconductor | 下载 |
| IXTA80N10T7 | IXYS Semiconductor | 下载 |
| IXTA220N04T2 | IXYS Semiconductor | 下载 |
| IXTA200N085T | IXYS Semiconductor | 下载 |
| IXTA76P10T-TRL | IXYS Semiconductor | 下载 |
| IXTA120P065T T/R | IXYS Semiconductor | 下载 |
| IXTA220N055T | IXYS Semiconductor | 下载 |
| IXTA240N055T | IXYS Semiconductor | 下载 |
| IXTA160N075T7 | IXYS Semiconductor | 下载 |
| IXTA200N075T | IXYS Semiconductor | 下载 |