IGBT 晶体管 DISC IGBT BIMSFT-VERYHIVOLT
Don"t be afraid to step up the amps in your device when using this IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 2500 V. Its maximum power dissipation is 32000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
得捷:
IGBT 2500V 5A 32W TO268
贸泽:
IGBT 晶体管 DISC IGBT BIMSFT-VERYHIVOLT
艾睿:
Trans IGBT Chip N-CH 2500V 5A 32000mW 3-Pin2+Tab TO-268
DeviceMart:
IGBT 2500V 5A 32W TO268
Win Source:
IGBT 2500V 5A 32W TO268 / IGBT 2500 V 5 A 32 W Surface Mount TO-268AA
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXBT2N250 | IXYS Semiconductor | 下载 |
| IXBT24N170 | IXYS Semiconductor | 下载 |
| IXBT12N300HV | IXYS Semiconductor | 下载 |
| IXBT42N170 | IXYS Semiconductor | 下载 |
| IXBT10N170 | IXYS Semiconductor | 下载 |
| IXBT20N360HV | IXYS Semiconductor | 下载 |
| IXBT12N300 | IXYS Semiconductor | 下载 |
| IXBT42N300HV | IXYS Semiconductor | 下载 |
| IXBT42N170A | IXYS Semiconductor | 下载 |
| IXBT20N300 | IXYS Semiconductor | 下载 |
| IXBT6N170 | IXYS Semiconductor | 下载 |