UCC27325DR

UCC27325DR概述

双4 - A峰值高速低侧功率MOSFET驱动器 Dual 4-A Peak High-Speed Low-Side Power-MOSFET Drivers

低端 栅极驱动器 IC 反相,非反相 8-SOIC


得捷:
IC MOSFET DRIVR DUAL HS 4A 8SOIC


立创商城:
UCC27325DR


德州仪器TI:
4-A/4-A dual-channel gate driver with one inverting, one non-inverting input and hystertic logic


艾睿:
Change state in a high power transistor by implementing this UCC27325DR power driver by Texas Instruments. This device has a maximum propagation delay time of 35 ns and a maximum power dissipation of 1140 mW. Its maximum power dissipation is 1140 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device has a minimum operating supply voltage of 4.5 V and a maximum of 15 V. This gate driver has an operating temperature range of -40 °C to 125 °C.


安富利:
MOSFET DRVR 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R


Chip1Stop:
Driver 4.5A 2-OUT Low Side Inv/Non-Inv 8-Pin SOIC T/R


Verical:
Driver 4.5A 2-OUT Lo Side Inv/Non-Inv 8-Pin SOIC T/R


UCC27325DR数据文档
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