RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
DESCRIPTION:
The is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions.
Features
· 30 MHz
· 28 VOLTS
· IMD = -30 dB
· GOLD METALLIZATION
· POUT= 125 WATTS
· GP= 15dB MINIMUM
· COMMON EMITTER CONFIGURATION
| 型号 | 品牌 | 下载 |
|---|---|---|
| MS1000 | Advanced Power Technology | 下载 |
| MS105A0101H | C&K Components | 下载 |
| MS10X375X15-LS | Panduit 泛达 | 下载 |
| MS10X500X15-LS | Panduit 泛达 | 下载 |
| MS10X625X15-LS | Panduit 泛达 | 下载 |
| MS106E3/TR12 | Microsemi 美高森美 | 下载 |
| MS105E3/TR12 | Microsemi 美高森美 | 下载 |
| MS109E3/TR12 | Microsemi 美高森美 | 下载 |
| MS108E3/TR8 | Microsemi 美高森美 | 下载 |
| MS109E3/TR8 | Microsemi 美高森美 | 下载 |
| MS105/TR8 | Microsemi 美高森美 | 下载 |