Trans RF MOSFET N-CH 170V 50A 5Pin Case M-177
The is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion.
##### Features
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Improved Ruggedness VBRDSS = 170V
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400W with 22dB Typ. Gain @ 30MHz, 50V
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Excellent Stability & Low IMD
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Common Source Configuration
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Available in Matched Pairs
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70:1 Load VSWR Capability at Specified Operating Conditions
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Nitride Passivated
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Refractory Gold Metallization
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Higher Power Version of VRF2933
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Thermally Enhanced Package