JANS1N4109UR-1

硅400毫安低噪声齐纳二极管 SILICON 400mA LOW NOISE ZENER DIODES

• 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435

• LEADLESS PACKAGE FOR SURFACE MOUNT

• LOW CURRENT OPERATION AT 250 µA

• METALLURGICALLY BONDED

MAXIMUM RATINGS

Junction and Storage Temperature: -65°C to +175°C

DC Power Dissipation: 500mW @ TEC= +125°C

Power Derating: 10mW/ °C above TEC= +125°C

Forward Derating @ 200 mA: 1.1 Volts maximum

艾睿:
Access the reverse breakdown region using a voltage regulator JANS1N4109UR-1 zener diode from Microsemi. Its maximum power dissipation is 500 mW. This device has a maximum regulator current of 25 mA. Its test current is 0.25 mA. Its maximum leakage current is 0.05 μA. This zener diode has a minimum operating temperature of -65 °C and a maximum of 175 °C. This zener device has a nominal voltage of 15 V and a voltage tolerance of 5%. It is made in a single configuration.

Verical:
Zener Diode Single 15V 5% 100Ohm 500mW 2-Pin DO-213AA Waffle