BSO615CGHUMA1

INFINEON  BSO615CGHUMA1  双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V

SIPMOS® N 和 P 通道 MOSFET

得捷:
MOSFET N/P-CH 60V 3.1A/2A 8SOIC

欧时:
Infineon SIPMOS 系列 Si N/P沟道 MOSFET BSO615CGHUMA1, 2 A，3.1 A, Vds=60 V, 8引脚 DSO封装

艾睿:
Create an effective common drain amplifier using this BSO615CGHUMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N|P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH/P-CH 60V 3.1A/2A 8-Pin DSO T/R

富昌:
N & P 沟道 ±60 V 0.11/0.3 Ω 15/13.5 nC SipMOS 小信号 晶体管 - DSO-8

TME:
Transistor: N/P-MOSFET; unipolar; 60/-60V; 3.1/-2A; 2W; PG-DSO-8

Verical:
Trans MOSFET N/P-CH 60V 3.1A/2A Automotive 8-Pin DSO T/R

Newark:
# INFINEON  BSO615CGHUMA1  Dual MOSFET, N and P Channel, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V