NXP BUK663R7-75C 晶体管, MOSFET, N沟道, 120 A, 75 V, 3.4 mohm, 10 V, 2.3 V
The is a N-channel enhancement-mode intermediate level gate drive FET in a plastic package using advanced TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in high performance automotive applications.
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|---|---|---|
| BUK663R7-75C | NXP 恩智浦 | 下载 |
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