晶体管 双极-射频, NPN, 15 V, 2.5 GHz, 280 mW, 25 mA, 20 hFE
Look no further than the RF bi-polar junction transistor, developed by Technologies, which can offer high radio frequency power compatibility. This product"s minimum DC current gain is 40@2mA@1 V|20@25mA@1V. It has a maximum collector emitter saturation voltage of 0.4@1mA@10mA V. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BFS17WH6327XTSA1 | Infineon 英飞凌 | 下载 |
| BFS17A,215 | NXP 恩智浦 | 下载 |
| BFS17A,235 | NXP 恩智浦 | 下载 |
| BFS17HTC | Vishay Semiconductor 威世 | 下载 |
| BFS17W,135 | NXP 恩智浦 | 下载 |
| BFS17,235 | NXP 恩智浦 | 下载 |
| BFS17PE6327HTSA1 | Infineon 英飞凌 | 下载 |
| BFS19,235 | NXP 恩智浦 | 下载 |
| BFS17SH6327XTSA1 | Infineon 英飞凌 | 下载 |
| BFS17A | NXP 恩智浦 | 下载 |
| BFS17 | NXP 恩智浦 | 下载 |