FDME1024NZT

FAIRCHILD SEMICONDUCTOR  FDME1024NZT  双路场效应管, MOSFET, 双N沟道, 3.8 A, 20 V, 0.055 ohm, 4.5 V, 700 mV

The is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

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Low profile

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Halogen-free

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±8V Gate to source voltage

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3.8A Continuous drain current

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6A Pulsed drain current