Trans IGBT Chip N-CH 1200V 50A 245000mW 3Pin3+Tab TO-3P Tube
This IGBT transistor from Renesas is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 245000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJH1CV5DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1BG7RDPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CF4RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CF6RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CF5RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1BF6RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CV6DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CF7RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CV7DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1BF7RDPQ-80#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH1CV7DPQ-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |