IXFN38N100Q2

IXFN38N100Q2 一个物料配4个螺丝

N-Channel Enhancement Mode

Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr

Features

• Double metal process for low gate resistance

• miniBLOC, with Aluminium nitride isolation

• Unclamped Inductive Switching UIS rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Switched-mode and resonant-mode power supplies

• DC choppers

• Pulse generators

得捷:
MOSFET N-CH 1000V 38A SOT-227

立创商城:
N沟道 1kV 38A

贸泽:
MOSFET 38 Amps 1000V 0.25 Rds

艾睿:
This IXFN38N100Q2 power MOSFET from Ixys Corporation can be used for amplification in your circuit. Its maximum power dissipation is 890000 mW. This device utilizes hiperfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH 1KV 38A 4-Pin SOT-227B

Win Source:
MOSFET N-CH 1000V 38A SOT-227 / N-Channel 1000 V 38A Tc 890W Tc Chassis Mount SOT-227B