TPS1101PWR

单P沟道增强型MOSFET SINGLE P-CHANNEL ENHANCEMENT-MODE MOSFETS

The TPS1101 is a single, low-rDSon, P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOSTM

process. With a maximum VGSth of -1.5 V and an IDSS of only 0.5 uA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDSon and excellent ac characteristics rise time 5.5 ns typical of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated PWM controllers or motor/bridge drivers.

The ultrathin thin shrink small-outline package or TSSOP PW version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit SOIC package. Such applications include notebook computers, personal digital assistants PDAs, cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other P-channel MOSFETs in SOIC packages. View datasheet View product folder