IPD90N06S404ATMA1

DPAK N-CH 60V 90A

表面贴装型 N 通道 90A（Tc） 150W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 60V 90A TO252-3

贸泽:
MOSFET N-CHANNEL_55/60V

艾睿:
Make an effective common gate amplifier using this IPD90N06S404ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 150000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.

安富利:
Trans MOSFET N-CH 60V 90A 3-Pin2+Tab TO-252

Verical:
Trans MOSFET N-CH 60V 90A Automotive 3-Pin2+Tab DPAK T/R