SIS862DN-T1-GE3

VISHAY  SIS862DN-T1-GE3  晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V

The is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch, synchronous rectification, DC-to-DC converter, boost converter and DC-to-AC inverters applications.

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100% Rg tested

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100% UIS tested

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Capable of operating with 5V gate drive

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Halogen-free

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-55 to 150°C Operating temperature range