Trans IGBT Chip N-CH 1200V 36A 180000mW 3Pin2+Tab D2PAK
IGBT PT 表面贴装型 TO-263（IXGA）
得捷:
IGBT 1200V 36A 180W TO263
艾睿:
The IXGA20N120B3 IGBT transistor from Ixys Corporation is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 180000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGA20N120B3 | IXYS Semiconductor | 下载 |
| IXGA16N60B2D1 | IXYS Semiconductor | 下载 |
| IXGA16N60C2 | IXYS Semiconductor | 下载 |
| IXGA16N60C2D1 | IXYS Semiconductor | 下载 |
| IXGA7N60BD1 | IXYS Semiconductor | 下载 |
| IXGA7N60C | IXYS Semiconductor | 下载 |
| IXGA7N60CD1 | IXYS Semiconductor | 下载 |
| IXGA16N60B2 | IXYS Semiconductor | 下载 |
| IXGA120N30TC | IXYS Semiconductor | 下载 |
| IXGA12N60B | IXYS Semiconductor | 下载 |
| IXGA12N60C | IXYS Semiconductor | 下载 |