MRF8S18120HSR3

RF Power Transistor,1805 to 1880MHz, 120W, Typ Gain in dB is 18.2 @ 1805MHz, 28V, LDMOS, SOT1793

Overview

The MRF8S18120HR3 and are designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

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## Features

* Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Optimized for Doherty Applications

* RoHS Compliant

* In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel.

## Features RF Performance Tables

### 1800 MHz

Typical GSM Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 72 Watts CW

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

*

\---|---|---

1805 MHz| 18.2| 49.8

1840 MHz| 18.6| 51.4

1880 MHz| 18.7| 53.9

* Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW Output Power 3 dB Input Overdrive from Rated Pout

* Typical Pout @ 1 dB Compression Point ≃ 120 Watts CW

### 1800 MHz

Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 800 mA, Pout = 46 Watts Avg.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **SR1

@ 400 kHz

dBc

.

* | **SR2

@ 600 kHz

dBc

.

* | **EVM

% rms

.

*

\---|---|---|---|---|---

1805 MHz| 17.9| 41.0| –64| –76| 1.6

1840 MHz| 18.2| 41.9| –63| –76| 1.7

1880 MHz| 18.3| 43.2| –61| –76| 2.0