IXXN200N60C3H1

IXXN200N60C3H1 五件套

IGBT 模块 PT 单路 底座安装 SOT-227B

立创商城:
五件套

得捷:
IGBT MOD 600V 200A 780W SOT227B

艾睿:
This powerful and secure IXXN200N60C3H1 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 780000 mW. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

Verical:
Trans IGBT Module N-CH 600V 200A 780000mW