BSC100N03MSGATMA1

INFINEON  BSC100N03MSGATMA1  晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V

I OptiMOS™3 功率 MOSFET，高达 40V

OptiMOS™产品提供高效能封装，以解决最具挑战性的应用，在有限空间内提供完全的灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 30V 12A/44A TDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSC100N03MSGATMA1, 44 A, Vds=30 V, 8引脚 TDSON封装

贸泽:
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M

e络盟:
功率场效应管, MOSFET, N沟道, 30 V, 44 A, 0.0083 ohm, TDSON, 表面安装

艾睿:
This BSC100N03MSGATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans MOSFET N-CH 30V 12A 8-Pin TDSON T/R

Chip1Stop:
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 30V; 41A; 30W; PG-TDSON-8

Verical:
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC100N03MSGATMA1  MOSFET Transistor, N Channel, 44 A, 30 V, 0.0083 ohm, 10 V, 2 V

Win Source:
MOSFET N-CH 30V 44A TDSON-8