硅NPN开关晶体管 NPN SILICON SWITCHING TRANSISTOR
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N2369AUB | Microsemi 美高森美 | 下载 |
| 2N2323S | Microsemi 美高森美 | 下载 |
| 2N2369A | Central Semiconductor | 下载 |
| 2N2326A | Central Semiconductor | 下载 |
| 2N2323 | Microsemi 美高森美 | 下载 |
| 2N2324 | Central Semiconductor | 下载 |
| 2N2329 | Central Semiconductor | 下载 |
| 2N2326 | Microsemi 美高森美 | 下载 |
| 2N2369ACSM | Semelab | 下载 |
| 2N2369ADCSM | Semelab | 下载 |
| 2N2323A | Microsemi 美高森美 | 下载 |