SRAM Chip Async Single 5V 256Kbit 32K x 8 10ns 28Pin SOJ
DESCRIPTION
The ISSIIS61C256AH is a very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.
FEATURES
• High-speed access time: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW typical
• Low standby power
— 250 µW typical CMOS standby
— 55 mW typical TTL standby
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply
| 型号 | 品牌 | 下载 |
|---|---|---|
| IS61C256AH-10J | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256AL-10TL | Integrated Silicon SolutionISSI | 下载 |
| IS61WV6416BLL-12TL | Integrated Silicon SolutionISSI | 下载 |
| IS61C1024-15J | Integrated Silicon SolutionISSI | 下载 |
| IS61LV256-15T | ICSI 矽成 | 下载 |
| IS61C1024AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61C6416AL-12TI | Integrated Silicon SolutionISSI | 下载 |
| IS61LV6416-10TI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI-TR | Integrated Silicon SolutionISSI | 下载 |
| IS61WV25616BLL-10BI | Integrated Silicon SolutionISSI | 下载 |
| IS61WV5128BLL-10BI | Integrated Silicon SolutionISSI | 下载 |