SIB456DK-T1-GE3

SIB456DK-T1-GE3概述

VISHAY  SIB456DK-T1-GE3  晶体管, MOSFET, N沟道, 6.3 A, 100 V, 0.153 ohm, 10 V, 1.6 V

The is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, full-bridge converter, power bricks and POL power applications.

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New thermally enhanced PowerPAK® package
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Small footprint area
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Low ON-resistance
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100% Rg tested
.
100% UIS tested
.
Halogen-free
.
-55 to 150°C Operating temperature range
SIB456DK-T1-GE3数据文档
型号 品牌 下载
SIB456DK-T1-GE3

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SIB408DK-T1-GE3

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SIB422EDK-T1-GE3

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SIB488DK-T1-GE3

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SIB417AEDK-T1-GE3

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SIB441EDK-T1-GE3

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SIB410DK-T1-GE3

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SIB433EDK-T1-GE3

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SIB406EDK-T1-GE3

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SIB452DK-T1-GE3

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SIB457EDK-T1-GE3

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