TCDT1101G

TCDT1101G概述

光电耦合器与光电晶体管输出 Optocoupler with Phototransistor Output

DESCRIPTION

The TCDT1100/TCDT1100G series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. The base of the phototransistor is not connected providing noise immunity. The elements are mounted on one leadframe which providing a fixed distance between input and output for highest safety requirements.

FEATURES

• Isolation test voltage 5300 VRMS

• Extra low coupling capacity - typical 0.2 pF

• High common mode rejection

• No base terminal connection for improved noise immunity

• CTR offered in 4 groups

• Thickness though insulation ≥0.75 mm

• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥275

• Lead Pb-free component

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TCDT1101G数据文档
型号 品牌 下载
TCDT1101G

Vishay Semiconductor 威世

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TCDT1101

Vishay Semiconductor 威世

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TCDT1124

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TCDT1102G

Vishay Semiconductor 威世

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TCDT1110G

Vishay Semiconductor 威世

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TCDT1100

Vishay Semiconductor 威世

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TCDT1100G

Vishay Semiconductor 威世

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TCDT1122

Vishay Semiconductor 威世

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TCDT1120G

Vishay Semiconductor 威世

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TCDT1123

Vishay Semiconductor 威世

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TCDT1124G

Vishay Semiconductor 威世

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