Trans IGBT Chip N-CH 600V 100A 1041000mW 3Pin3+Tab T-MAX
The IGBT transistor from is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 1041000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT80GP60B2G | Microsemi 美高森美 | 下载 |
| APT8DQ60KG | Microsemi 美高森美 | 下载 |
| APT8M80K | Microsemi 美高森美 | 下载 |
| APT8M100B | Microsemi 美高森美 | 下载 |
| APT80GA60B | Microsemi 美高森美 | 下载 |
| APT80GA90B | Microsemi 美高森美 | 下载 |
| APT80GA90LD40 | Microsemi 美高森美 | 下载 |
| APT8052BFLLG | Microsemi 美高森美 | 下载 |
| APT8065BVRG | Microsemi 美高森美 | 下载 |
| APT80GA60LD40 | Microsemi 美高森美 | 下载 |
| APT85GR120L | Microsemi 美高森美 | 下载 |