Trans RF MOSFET N-CH 40V 7A 3Pin PowerSO-10RF Formed lead T/R
Using semiconductor technology, this RF amplifier from STMicroelectronics operates at high frequencies to amplify or switch electronic signals and electrical power. Its maximum power dissipation is 79000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This RF power MOSFET has an operating temperature range of -65 °C to 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD55025TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55025S-E | ST Microelectronics 意法半导体 | 下载 |
| PD55035-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015-E | ST Microelectronics 意法半导体 | 下载 |
| PD55008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD55015TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD55003TR-E | ST Microelectronics 意法半导体 | 下载 |