IPD088N06N3 G数据手册PDF_IPD088N06N3 G中文资料-锐单商城

IPD088N06N3 G概述

INFINEON IPD088N06N3 G 晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0071 ohm, 10 V, 3 V

Summary of Features:

.: Excellent gate charge x R DSon product FOM

.: Very low on-resistance R DSon

.: Ideal for fast switching applications

.: RoHS compliant - halogen free

.: MSL1 rated

Benefits:

.: Highest system efficiency

.: Less paralleling required

.: Increased power density

.: System cost reduction

.: Very low voltage overshoot

IPD088N06N3 G替代型号

IPD088N06N3 G详细参数

IPD088N06N3 G数据文档

型号	品牌	下载
IPD088N06N3 G	Infineon 英飞凌	下载
IPD053N08N3G	Infineon 英飞凌	下载
IPD090N03LGATMA1	Infineon 英飞凌	下载
IPD050N03LG	Infineon 英飞凌	下载
IPD079N06L3GBTMA1	Infineon 英飞凌	下载
IPD088N06N3GBTMA1	Infineon 英飞凌	下载
IPD050N03LGATMA1	Infineon 英飞凌	下载
IPD036N04LGBTMA1	Infineon 英飞凌	下载
IPD034N06N3GATMA1	Infineon 英飞凌	下载
IPD031N06L3G	Infineon 英飞凌	下载
IPD025N06NATMA1	Infineon 英飞凌	下载