FQP9N50C

FQP9N50C概述

500V N沟道MOSFET 500V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

• 9 A, 500V, RDSon= 0.8 Ω@VGS= 10 V

• Low gate charge typical 28 nC

• Low Crss typical 24 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

FQP9N50C数据文档
型号 品牌 下载
FQP9N50C

Fairchild 飞兆/仙童

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Fairchild 飞兆/仙童

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