IX21844N

IX21844N概述

Driver 600V 2.5A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 14Pin SOIC N Tube

Switch between states in a high power transistor by using this power driver developed by Ixys Corporation. This device has a maximum propagation delay time of 900 ns and a maximum power dissipation of 1000 mW. Its maximum power dissipation is 1000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has an operating temperature range of -40 °C to 125 °C.

IX21844N数据文档
型号 品牌 下载
IX21844N

IXYS Semiconductor

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IX2127G

IXYS Semiconductor

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IX2127N

IXYS Semiconductor

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IX21844NTR

IXYS Semiconductor

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IX2113B

IXYS Semiconductor

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IX2113BTR

IXYS Semiconductor

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IX21844G

IXYS Semiconductor

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IX2113G

IXYS Semiconductor

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IX2127NTR

IXYS Semiconductor

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IX21844-EVAL

IXYS Semiconductor

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IX2120B

IXYS Semiconductor

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